Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
The sidewall spacer may be used to form sources and drains and to define sub-lithographic lightly doped drains.
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
The sidewall spacer may be used to form sources and drains and to define sub-lithographic lightly doped drains.